There are many factors that are considered when making a purchasing decision including finding the IGBT module with perfect end application outcomes.
An online design tool will assist you in choosing the right power semiconductor. You can analyse the performance in specific applications and inspect product properties under specific operating conditions.
Aside from the inevitable, Price! We take a look at other factors that could impact the decision process.
1. Power semiconductor market experience
Knowledge, experience and a Research & Development team with capabilities of producing product designs to meet individual needs are frequently cited as important in the decision process.
Dynex Semiconductor, a UK based in-house manufacturing plant has 60 years of experience in design, development and production of high power-semiconductors and power assemblies.
2. Manufacturing and testing facilities
The reassurance that prior to taking ownership of an IGBT module order, they are fully tested.
The Dynex manufacturing plant is a vertically integrated facility with device design, wafer fabrication, packaging, qualification and testing. All are available on site at our facilities in Lincoln, UK.
To complement our IGBT manufacturing services, we have designed a wide range of test systems for high power semiconductors. The equipment enables full parametric testing on all IGBT module configurations up to 6.5 kV across a full range of current ratings.
3. Product range for diverse application use
The range of power modules offered includes half bridge, chopper, dual, single and bi-directional switch configurations utilising chips that have been optimised for switching or static loses depending on the application. IGBT modules cover voltages from 1200V to 6500V and currents from 100A to 3600A.
Power cycling with the latest generation IGBT dies is a key component in energy efficient conversion systems used in electric locomotives, electric vehicles, electric power grids and renewable energy plants as well as in aerospace, power changing equipment, traction drives, HVDC and others requiring high thermal cycling capabilities.
4. Collaboration and technical capabilities
Modules provide reliability, efficiency, and operating performances with 3 chip options and demonstrable low total loses. Drawing on our vast experiences in our manufacture of power semiconductors, we can design and produce high reliability IGBT’s customised to meet individual demands for end applications.
5. Co-development
Dynex have a partnership with CRRC Times Electric – the two companies work together to develop new products bringing unique expertise and resources to the partnership. Shared resources and expertise have allowed us to pool manufacturing facilities, knowledge, and expertise, leading to more efficient development processes. This collaboration accelerates product development and reduces costs.
Dynex production history bringing the latest in IGBT technology
1995: Dynex began manufacturing IGBT modules at our factory in Lincoln, Lincolnshire.
2008: Dynex announced the acquisition of its company by Zhuzhou CSR Times Electric. Since then there has been a rapid development in our IGBT capability. We began with 4-inch wafers, then up graded to 6-inch at our plant in Lincoln. We then extended our technology to support the design of this new facility.
2014: IGBT wafer fabrication facility and a high-volume module assembly line
2019: High-power trench gate technology was released.
2020: Dynex launched the extremely efficient 1.2kV and 1.7kV Generation 5 Trench H1 & H2 IGBT and the Generation 5 & 7 Trench M1 range. The low voltage ‘H1 and H2’ package type modules incorporate an electrically isolated base plate and low inductance construction, enabling designers to optimise circuit layouts and utilise grounded heat sinks for safety.
The H1 and H2 IGBT’s offer high performance in Renewable Energy Power Conversion applications.
The M1 range of medium voltage IGBTs are designed and manufactured for applications within the electric vehicle, industrial, solar and wind renewable energy and traction markets. This product offers a number of benefits for end-user applications inclusive of; reduced system cost, improved thermal characteristics, maximised system efficiency and reliable operation in severe environments.
Our latest in IGBT development
2024: Sees the development of our advanced and next-generation silicon IGBT cutting-edge Super-junction (SJ) Recessed Emitter Trench IGBT for the automotive application. They represent a revolutionary step in silicon power devices. This new technology combines the benefits of both IGBT’s and MOSFET’s offering superior performance in terms of power handling capability, on-state losses and turn-off loses.
Using 8” wafer mass fabrication with the fine pattern cell and super junction structure, switching performance can be enhanced by up to 30% while keeping the equal conduction loss and a broad safe operating area.
In summary, Dynex Semiconductor leverages over 60 years of expertise in power semiconductor manufacturing to provide a diverse range of high-performance IGBT modules, supported by advanced testing facilities and collaborative development efforts, ensuring reliability and efficiency for various applications. Our commitment to innovation is exemplified by the introduction of next-generation technologies that enhance performance and reduce costs in important sectors such as renewable energy and automotive applications.