The Dynex IGBT module part numbering system can be found in AN5700. If you need support then please Contact us
We have a number of options to support your Dynex IGBT Module Selection:
- Online Design Tool which you can access here
- Application notes for example
AN6156 covers IGBT module power losses
AN6353 covers high power IGBT optimization
AN5945 covers IGBT module reliability.
- Support from our application team Contact us
Dynex UK manufactured IGBT modules are lead-free so you do not have to be concerned with upcoming legislative requirements.
Yes we do. Dynex is a vertically integrated UK company in that it has research, device design, wafer fabrication, packaging, qualification, testing and manufacturing operations on site in the UK.
Dynex manufactures all its IGBT & FRD dies for its UK assembled IGBT modules at our UK wafer facility. It is possible for Dynex to supply as bare die. For further information, please Contact us.
Dynex has IGBT modules optimized for either conduction or switching losses. You can select the best matching module for each circuit location requirements and not be limited by a single module option that is a performance compromise. To get support from our application team Contact us
All manufacturers should provide guidelines that are specific to their modules. Please refer to AN4505.
Dynex Semiconductor’s 1700V IGBT module M1 range (152x 62mm) has met the compliance standards of the ISA 71.04-2013 (Industrial Standards for the protection of electronic equipment). This enables inverters to operate reliably within environments where there is higher levels of H2S (Hydrogen Sulphide) present for longer. Operating environments with high levels of H2S are found in wastewater treatment, mining and paper production as well as other applications.
Download the datasheet here > DNX_DIM450M1HS17-PA500
They are both semiconductor devices, both have a controling terminal called a ‘gate’ and both are designed to handle high voltages and currents. But, they are based on different technologies.
An Insulated-Gate Bipolar Transistor (IGBT) has the combined features of a MOSFET and bipolar junction transistor (BJT), an IGBT requires a continuous gate voltage to keep it turned off and can be turned off more quickly by the application of a negative voltage. It can handle high power levels and can switch on and off at higher frequencies than a thyristor.
A thyristor is based on a 4-layer transistor technology designed to handle high currents and voltages and it requires only a pulse provided to the gate terminal to change to a conducting mode (turned on) and returns to a blocking mode (turned-off) when the forward current drops below the threshold holding current .
Dynex IGBT’S and thyristors can be used for many similar applications:
Dynex range of IGBT modules include half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents from 100A to 3600A. Modules are available utilising chips that have been optimised for switching or static losses depending on the application.
Dynex Thyristors are typically used in AC to DC converters (Rectifiers) which employ phase control to vary the average voltage on the output of the converter or to switch the AC supply on and off.
Thyristor devices are designed and manufactured for particular applications where higher blocking voltages and increased current capability are required and frequency of operation makes it a suitable choice.
Dynex range of IGBT modules include half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents from 100A to 3600A. Modules are available utilising chips that have been optimised for switching or static losses depending on the application.
Dynex IGBT modules are designed and manufactured in a variety of blocking voltages, current capacity, circuit configuration dimensions and isolation voltages. IGBT modules are designed to produce high reliability and customised to meet the individual demands for end applications including aerospace, automotive, medical, renewable energy and traction Industrial markets.
Dynex maintain competitive lead times for IGBT module assembly.
Contact Dynex sales team on +44 (0)1522 500500 or powersolutions@dynexsemi.com for an up to date lead time on your preferred IGBT.
Our manufacturing plant in Lincoln, UK is a vertically integrated facility with device design, wafer fabrication, packaging, qualification and testing available on site.
Dynex IGBT modules include half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents from 100A to 3600A. They are available utilising chips that have been optimised for switching or static losses depending on the application.
- High reliability inverters
- Motor controllers
- Traction drives
- High power converters
- Renewable energy power conversion
- Power charging equipment
- High reliability inverters
- Various circuit topologies (half bridge, single switch, chopper)
- Electric vehicles
Through initial concept to full production, Dynex support customer requirements to provide enhanced and reliable device outlines to meet specific demands.
Using our in-house design team, Dynex continue to develop processes and designs to utilise the latest techniques to improve cooling, current output, lifetime and reliability. Great emphasis is placed on low inductance power bus bar designs, enabling the modules to function under fast switching transients such as, those of Trench Gate IGBT’s and SiC MOSFET. Modules are available utilising chips that have been optimised for switching or static losses depending on the application.
Yes, our IGBT modules are suitable for a number of energy power conversion applications and offer significant features.
IGBT 3.3kV to 6.5kV modules offer 10µs short circuit withstand, high thermal cycling capability and high current density. Choose from our low stitching range, low conduction range or standard range of IGBT modules.