Dynex's Senior IGBT Chip Design & Development Engineer, Shoubhik Gupta will be presenting his paper, 'Evaluation of Silicon Nitride as Moisture Barrier Layer for Enhanced Reliability of IGBT Modules During HV-H3TRB Test' during one of the poster session at PCIM Europe in Nuremberg, 9 - 11 May 2023. In addition Dynex will be exhibiting again this year and hope to welcome you to our stand 9 - 311. 

Abstract

The robustness of power semiconductor modules in the harsh operating environment, especially in presence of moisture at high operating voltages is of crucial importance. Moisture can severely affect the module’s performance and so it is necessary to design devices that can stop the moisture permeation. In this paper, we present the application of silicon nitride as a moisture barrier layer over the busbars that were not covered by metal. The modules with the nitride layer showed promising results during the HV-H3TRB test by passing the 1000 hours at 3600V and then later on also passed the residual blocking test.

To receive a copy of Shoubhik Gupta and Co's research paper and for an opportunity to discuss in detail the 'Evaluation of Silicon Nitride as Moisture Barrier Layer for Enhanced Reliability of IGBT Modules During HV-H3TRB Test', sign up to attend the PCIM conference or contact us to arrange a meeting with our team at powersolutions@dynexsemi.com