The newly released Generation 6 RTMOS (recessed trench metal-oxide semiconductor) 1200V IGBT module, DIM800WHS12-PF500 further extends the portfolio of devices developed and produced by Dynex. Our range of high power IGBT modules include half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM800WHS12-PF500 is a half bridge 1200V, trench gate, insulated gate bipolar transistor (IGBT) module with enhanced field stop and implantation technology. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
IGBT, DIM800WHS12-PF500 is based on fine geometry trench gate technology to improve power density. The size of the 6th generation RTMOS is reduced in comparison to existing IGBT modules.
These devices are optimised for solar and wind turbine inverters, motor drives, power systems and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Key features
- Copper flat base plate with Al2O3 substrates
- High thermal cycling capacity
- High power density
- Lead-free soldering
For product technical details, download the DIM800WHS12-PF500 datasheet here.
About our range of IGBT modules
Dynex manufacturing plant is a vertically integrated facility with device design, wafer fabrication, packaging, qualification and testing available on site.
Our IGBT modules come in a variety of blocking voltages, current capacity, circuit configuration dimensions and isolation voltages covering a full range of power, up to 6.5kV at 1000A, 4.5kV at 1500A and 3.3kV at 1800A. Modules incorporate a choice of DMOS or latest-generation Trench-Gate technology.
IGBT Modules offer the following:
- Superior power cycling performance with the latest IGBT generation die and low switching losses.
- Low inductance power bus bar designs enabling the module to perform with fast switching transients such as those generated by next generation trench gate IGBTs and SiC MOSFET.
- Trench-Gate designs: incorporating Dynex-proprietary LOCOS gate technology.
- Chip options for performance optimisation for switching or static losses depending on the application, allowing for exact tailoring to specific customer applications ensuring efficiency and reliability.
- Robust module package to ensure safe energy containment and protection of the surrounding environment, should there be an unplanned event in the power electronics system.
- 150ºC operating junction temperature, providing significant operating headroom for greater durability.
All modules are designed to produce high reliability and are customised to meet the individual demands for end applications including aerospace, automotive, medical, renewable energy, traction and Industrial markets.
Dynex design, develop and produce high-power semiconductors while maintaining competitive lead times for our IGBT module assemblies.
Contact Dynex on +44 (0)1522 500500 or powersolutions@dynexsemi.com for technical information or an up to date lead time on your preferred IGBT.