The DIM450M1HS12-PB500, DIM600M1HS12-PC500 and DIM450M1HS17-PA500 are trench, insulated gate bipolar transistor (IGBT) modules with enhanced field stop and implantation technology.
The IGBT modules have a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
The M1 modules are designed to scale 152 x 62 x 11mm, and weigh 345g.
The modules have a chip Junction temperature operating range from -40°C to a maximum of 150°C. Suitable for applications within the electric vehicle, industrial, renewable and traction markets.
The modules incorporate an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
- Trench Gate IGBT
- Cu Base with Enhanced Al2O3 Substrates
- High Thermal Cycling Capability
- 10µs Short Circuit Withstand
- Low EON EOFF Variant
- Compact Module
- Motor Drives
- Power Charging Equipment
- Renewable Energy Power Conversion
- Electric Vehicles
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A.
Download the DIM450M1HS12-PB500 datasheet here.
Download the DIM600M1HS12-PC500 datasheet here.
Download the DIM450M1HS17-PA500 datasheet here.