High performance FRD RBSOA
For IGBT modules, the integrated FWD reverse bias safe operating area (RBSOA) is defined as the voltage and current conditions over which the device can be expected to operate safely.
The safe operating area SOA of an IGBT module is the area bounded by a curve of collector current VS collector-emitter voltage. The curve gives the limits of current and voltage related to the total power dissipation of the device. If the operating conditions of the device are within this area, then the device will function safely provided it is not exceeded. The reverse bias safe operating area (RBSOA) curve is the locus of points defining the maximum permissible simultaneous occurrence of collector current and collector-emitter voltage during the turn-off phase. The curve exhibits three limiting boundaries; maximum collector current (the flat portion of the curve), the maximum power (sloping line) and maximum voltage (vertical line). The user should observe that the RBSOA curve is constructed for a given set of conditions and so it is useful for comparison between different devices.
The maximum limit of the FWD reverse recovery current is set by the recommended gate resistor specified in the datasheet. The maximum limit of reverse recovery voltage is set by the diode reverse blocking voltage rating. The user should verify that during the commutation of diode current to the IGBT, the reverse recovery current and the voltage should stay within the RBSOA of the diode for the complete process. Also, the maximum junction temperature of the FWD should not exceed 125°C and the maximum switching controlled by the gate conditions of the IGBT should not be allowed to be exceeded.
Excellent power handling with soft recovery under arduous conditions
RBSOA specifications are useful to the design engineer working on power circuits such as amplifiers and power supplies as they allow quick assessment of the limits of device performance, the design of appropriate protection circuitry, or selection of a more capable device. RBSOA curves are also important in the design of foldback circuits.
Vertically integrated IGBT module manufacturing
The Dynex manufacturing plant is a vertically integrated facility with device design, wafer fabrication, module packaging, qualification and testing all taking place at our headquarters in Lincoln, United Kingdom.
With 60 years of high power semiconductor manufacturing taking place in the Dynex facilities in Lincoln, we are able to deliver vertically integrated semiconductor modules through our experience and expertise to deliver highly robust IGBT modules tailored to your needs.
This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.